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mrf6v4300nr1 mrf6v4300nbr1 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets designed primarily for cw large--signal output and driver applications with frequencies up to 600 mhz. devices are unmatched and are suitable for use in industrial, medical and scientific applications. ? typical cw performance: v dd =50volts,i dq = 900 ma, p out = 300 watts, f = 450 mhz power gain ? 22 db drain efficiency ? 60% ? capable of handling 10:1 vswr, @ 50 vdc, 450 mhz, 300 watts cw output power features ? characterized with series equival ent large--signal impedance parameters ? qualified up to a maximum of 50 v dd operation ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +110 vdc gate--source voltage v gs --6.0, +10 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/devel opment tools/calculators to access mttf calculators by product. document number: mrf6v4300n rev. 3, 4/2010 freescale semiconductor technical data mrf6v4300nr1 mrf6v4300nbr1 case 1484--04, style 1 t o -- 2 7 2 w b -- 4 plastic mrf6v4300nbr1 case 1486--03, style 1 t o -- 2 7 0 w b -- 4 plastic mrf6v4300nr1 10--600 mhz, 300 w, 50 v lateral n--channel single--ended broadband rf power mosfets parts are single--ended (top view) rf out /v ds figure 1. pin connections rf out /v ds rf in /v gs rf in /v gs note: exposed backside of the package is the source terminal for the transistor. ? freescale semiconductor, inc., 2008--2010. a ll rights reserved.
2 rf device data freescale semiconductor mrf6v4300nr1 mrf6v4300nbr1 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 83 c, 300 w cw r jc 0.24 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1c (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 10 adc drain--source breakdown voltage (i d = 150 ma, v gs =0vdc) v (br)dss 110 ? ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 50 adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 2.5 ma on characteristics gate threshold voltage (v ds =10vdc,i d = 800 adc) v gs(th) 0.9 1.65 2.4 vdc gate quiescent voltage (v dd =50vdc,i d = 900 madc, measured in functional test) v gs(q) 1.9 2.7 3.4 vdc drain--source on--voltage (v gs =10vdc,i d =2adc) v ds(on) ? 0.25 ? vdc dynamic characteristics reverse transfer capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 2.8 ? pf output capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 105 ? pf input capacitance (v ds =50vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 304 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd =50vdc,i dq = 900 ma, p out = 300 w, f = 450 mhz, cw power gain g ps 20 22 24 db drain efficiency d 58 60 ? % input return loss irl ? -- 1 6 -- 9 db 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. attention: the mrf6v4300n and mrf6v4300nb are hi gh power devices and special considerations must be followed in board design and mounting. incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temper ature. refer to freescale application note an3263 (for bolt down mounting) or an1907 (for solder reflow mounting) prior to starting system design to ensure proper mounting of these devices.
mrf6v4300nr1 mrf6v4300nbr1 3 rf device data freescale semiconductor figure 2. mrf6v4300nr1(nbr1) test circuit schematic z8 0.380 x 0.220 microstrip z9 0.040 x 0.170 microstrip z10 0.315 x 0.170 microstrip z11 0.230 x 0.170 microstrip z12 0.390 x 0.170 microstrip z13 0.680 x 0.082 microstrip pcb arlon cuclad 250gx--0300--55--22, 0.030 , r =2.55 z1 0.900 x 0.082 microstrip z2 0.115 x 0.170 microstrip z3 0.260 x 0.170 microstrip z4 0.380 x 0.170 microstrip z5 0.220 x 0.220 microstrip z6 0.290 x 0.630 microstrip z7 0.220 x 0.630 microstrip z1 rf input c11 z2 z3 z4 z5 z6 dut z9 c15 rf output z10 c4 b1 v bias v supply c7 r1 c2 c1 + c8 z7 z13 z8 b3 c19 l1 c12 c16 l4 l2 c13 c17 c18 c9 c5 c21 c22 c20 c23 c24 z12 c25 c26 c27 c28 z11 l3 l5 c14 c10 c6 b2 c3 v supply table 6. mrf6v4300nr1(nbr1) test circui t component designations and values part description part number manufacturer b1 short ferrite bead 2743019447 fair--rite b2, b3 long ferrite beads 2743021447 fair--rite c1 47 f, 25 v, tantalum capacitor t491b476m025at kemet c2, c3 22 f, 50 v, chip capacitors c5750jf1h226zt tdk c4, c5, c6, c7 1 f, 100 v, chip capacitors c3225jb2a105kt tdk c8, c9, c10 15 nf, 100 v, chip capacitors c3225ch2a153jt tdk c11, c12, c13, c14, c15 240 pf, chip capacitors atc100b241jt500xt atc c16 9.1 pf, chip capacitor atc100b9r1jt500xt atc c17 15 pf, chip capacitor atc100b150jt500xt atc c18 51 pf, chip capacitor atc100b510jt500xt atc c19, c20 5.6 pf, chip capacitors atc100b5r6jt500xt atc c21, c22, c23, c24 4.3 pf, chip capacitors atc100b4r3jt500xt atc c25, c26, c27, c28 4.7 pf, chip capacitors atc100b4r7jt500xt atc l1 27 nh inductor 1812sms--27njlc coilcraft l2, l3 47 nh inductors 1812sms--47njlc coilcraft l4, l5 5 turn, #18 awg inductors, hand wound copper wire r1 10 ? , 1/4 w, chip resistor crcw120610r1fkea vishay
4 rf device data freescale semiconductor mrf6v4300nr1 mrf6v4300nbr1 figure 3. mrf6v4300nr1(nbr1) t est circuit component layout atc mrf6v4300n/nb cut out area rev. 1 c1 c7 b1 r1 c4 c8 c12 l1 c11 c16 c17 c18 b3 c2 c9 c5 l2 c13 l4 l5 c20 c21 c22 c25 c26 c19 c23 c24 c27 c28 c15 l3 c14 c10 c6 b2 c3
mrf6v4300nr1 mrf6v4300nbr1 5 rf device data freescale semiconductor typical characteristics 50 1 1000 020 10 v ds , drain--source voltage (volts) figure 4. capacitance versus drain--source voltage c, capacitance (pf) 30 c iss 1 100 1 t c =25 c 10 10 v ds , drain--source voltage (volts) figure 5. dc safe operating area i d , drain current (amps) 40 0 10 0 drain voltage (volts) 9 8 7 6 20 120 figure 6. dc drain current versus drain voltage i d , drain current (amps) 60 600 18 23 i dq = 1350 ma 10 22 21 20 p out , output power (watts) cw figure 7. cw power gain versus output power g ps , power gain (db) v dd =50vdc f = 450 mhz 100 10 40 100 5 v gs =3v c oss c rss 80 100 4 3 2 1 2.75 v 2.63 v 2.5 v 2.25 v 19 100 1125 ma 900 ma 450 ma 100 -- 5 5 -- 1 5 10 p out , output power (watts) pep -- 2 5 -- 3 0 -- 3 5 -- 4 0 600 figure 8. third order intermodulation distortion versus output power imd, third order intermodulation distortion (dbc) v dd = 50 vdc, f1 = 450 mhz, f2 = 450.1 mhz two--tone measurements, 100 khz tone spacing -- 4 5 -- 5 0 -- 2 0 i dq = 450 ma 1350 ma 900 ma 650 ma 1125 ma 38 50 60 28 31 29 58 56 54 52 p in , input power (dbm) figure 9. cw output power versus input power p out , output power (dbm) 30 34 p3db = 56.06 dbm (403 w) actual ideal p1db = 55.15 dbm (327 w) v dd =50vdc,i dq = 900 ma f = 450 mhz measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc 650 ma -- 6 0 -- 1 0 -- 5 0 59 57 55 53 51 33 32 35 36 37
6 rf device data freescale semiconductor mrf6v4300nr1 mrf6v4300nbr1 typical characteristics figure 10. power gain versus output power p out , output power (watts) cw g ps , power gain (db) v dd =20v 25 v 400 16 23 0 200 50 18 17 100 150 21 20 22 i dq = 900 ma f = 450 mhz 35 v 40 v 19 250 300 350 45 v 40 35 60 15 25 _ c t c =--30 _ c 85 _ c 25 50 45 40 p in , input power (dbm) figure 11. power output versus power input p out , output power (dbm) v dd =50vdc i dq = 900 ma f = 450 mhz 20 30 55 18 25 10 10 80 24 22 20 70 60 50 40 30 20 p out , output power (watts) cw figure 12. power gain and drain efficiency versus cw output power g ps , power gain (db) d, drain efficiency (%) d 23 21 19 100 500 25 _ c t c =--30 _ c 85 _ c 85 _ c g ps v dd =50vdc i dq = 900 ma f = 450 mhz 25 _ c -- 3 0 _ c 30 v 50 v 35 250 90 t j , junction temperature ( c) figure 13. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd =50vdc,p out = 300 w, and d = 60%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 8 10 7 10 5 110 130 150 170 190 mttf (hours) 210 230 10 6
mrf6v4300nr1 mrf6v4300nbr1 7 rf device data freescale semiconductor z o =2 ? z load z source f = 450 mhz f = 450 mhz v dd =50vdc,i dq = 900 ma, p out = 300 w cw f mhz z source ? z load ? 450 0.39 + j1.26 1.27 + j0.96 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 14. series equivalent source and load impedance z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor mrf6v4300nr1 mrf6v4300nbr1 package dimensions
mrf6v4300nr1 mrf6v4300nbr1 9 rf device data freescale semiconductor
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mrf6v4300nr1 mrf6v4300nbr1 11 rf device data freescale semiconductor
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mrf6v4300nr1 mrf6v4300nbr1 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor mrf6v4300nr1 mrf6v4300nbr1 product documentation and software refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 july 2008 ? initial release of data sheet 1 oct. 2008 ? added fig. 13, mttf versus junction temperature, p. 6 2 mar. 2009 ? corrected z source , ?0.40 + j5.93? to ?0.39 + j1.26? and z load , ?1.42 + j5.5? to ?1.27 + j0.96? in fig. 14, series equivalent source and load impedance dat a table and replotted data, p. 7 3 apr. 2010 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table, related ?continuous use at maximum temperature will affect mttf? footnote added and changed 200 c to 225 c in capable plastic package bullet, p. 1 ? added electromigration mttf calculator and rf hi gh power model availability to product software, p. 14
mrf6v4300nr1 mrf6v4300nbr1 15 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008--2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6v4300n rev. 3, 4/2010

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